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| Ordering number : ENN7609 ECH8401 N-Channel Silicon MOSFET ECH8401 Ultrahigh-Speed Switching Applications Preliminary Features * * * Package Dimensions unit : mm 2222 [ECH8401] 0.25 Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. 0.3 0.15 8 5 2.3 2.8 0.65 2.9 Top View 0.25 1 4 0.9 0.07 Bottom View 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : ECH8 Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (900mm2!0.8mm) Conditions Ratings 20 12 10 40 1.6 150 --55 to +150 Unit V V A A W C C Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) Conditions ID=1mA, VGS=0 VDS=20V, VGS=0 VGS=8V, VDS=0 VDS=10V, ID=1mA Ratings min 20 1 10 0.5 1.3 typ max Unit V A A V Marking : KA Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 41504 TS IM TA-100665 No.7609-1/4 ECH8401 Continued from preceding page. Parameter Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=10V, ID=5A ID=5A, VGS=4V ID=5A, VGS=3.1V ID=2A, VGS=2.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=10V, VGS=10V, ID=5A VDS=10V, VGS=10V, ID=5A VDS=10V, VGS=10V, ID=5A IS=10A, VGS=0 Ratings min 14 typ 20 9 10 12 1700 330 270 29 150 220 160 52 2.6 7.4 0.82 1.2 14 15.5 19 max Unit S m m m pF pF pF ns ns ns ns nC nC nC V Switching Time Test Circuit VIN 4V 0V PW=10s D.C.1% VIN VDD=10V ID=5A RL=2 Electrical Connection D D D D D VOUT G P.G 50 ECH8401 S S S S G 10 ID -- VDS 2.0V 10 ID -- VGS VDS=10V 8.0V 9 8 9 2.5V 8 Drain Current, ID -- A Drain Current, ID -- A 3.0V 7 6 5 4 3 2 1 0 0 0.1 7 6 5 VGS=1.5V 4.0V Ta=7 5 0 0.5 1.0 3 2 1 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 --25 1.5 C 25C 4 C 2.0 IT04243 Drain-to-Source Voltage, VDS -- V IT04242 Gate-to-Source Voltage, VGS -- V No.7609-2/4 ECH8401 30 RDS(on) -- VGS Ta=25C Static Drain-to-Source On-State Resistance, RDS(on) -- m 20 18 16 14 12 10 8 6 4 2 0 --50 --25 0 RDS(on) -- Ta Static Drain-to-Source On-State Resistance, RDS(on) -- m 25 20 A, VG I D=2 2.5 S= V 15 ID=2A 5A , VG I D=5A .0V S=4 10 5 0 0 2 4 6 8 10 IT04244 25 50 75 100 125 150 Gate-to-Source Voltage, VGS -- V 100 yfs -- ID Ambient Temperature, Ta -- C 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 IT04245 IF -- VSD VGS=0 Forward Transfer Admittance, yfs -- S 7 5 VDS=10V 2 Ta= 7 0.3 0.4 0.5 5 3 2 1.0 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 IT04246 0.01 7 5 3 2 0.001 0.2 0.6 --25 0.7 7 75 C 25 C 25 C 0.8 10 Ta 5C C C 25 = -- Forward Current, IF -- A 3 0.9 1.0 1.1 Drain Current, ID -- A 1000 7 SW Time -- ID 10000 Ciss, Coss, Crss -- VDS f=1MHz Diode Forward Voltage, VSD -- V IT04247 Switching Time, SW Time -- ns 5 3 2 VDD=10V VGS=4V Ciss, Coss, Crss -- pF 7 5 3 2 1000 7 5 3 2 td(off) Ciss tf 100 7 5 3 2 tr td(on) Coss Crss 100 10 0.1 7 2 3 5 7 1.0 2 3 5 7 10 2 IT04248 100 7 5 3 2 0 2 4 6 8 10 12 14 16 18 20 Drain Current, ID -- A 10 9 VGS -- Qg Drain-to-Source Voltage, VDS -- V IT04249 ASO Gate-to-Source Voltage, VGS -- V VDS=10V ID=5A Drain Current, ID -- A IDP=40A ID=10A 10 <10s 8 7 6 5 4 3 2 1 0 0 10 20 30 40 50 60 IT04250 1m s 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 10 ms DC 0m s op era tio n Operation in this area is limited by RDS(on). Ta=25C Single pulse Mounted on a ceramic board(900mm2!0.8mm) 23 5 7 0.1 23 5 7 1.0 23 5 7 10 23 IT04251 0.01 0.01 Total Gate Charge, Qg -- nC Drain-to-Source Voltage, VDS -- V No.7609-3/4 ECH8401 1.8 PD -- Ta M Allowable Power Dissipation, PD -- W 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 ou nt ed on ac er am ic bo ar d( 90 0m m2 ! 0.8 m m ) Ambient Temperature, Ta -- C IT04252 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of April, 2004. Specifications and information herein are subject to change without notice. PS No.7609-4/4 |
Price & Availability of ECH8401
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